Method for Improving Data Retention of ReRAM Chips Operating at Low Operating Temperatures

ABSTRACT

Programming a resistive memory structure at a temperature well above the operating temperature can create a defect distribution with higher stability, leading to a potential improvement of the retention time. The programming temperature can be up to 100 C above the operating temperature. The memory chip can include embedded heaters in the chip package, allowing for heating the memory cells before the programming operations.

This application claims priority to U.S. Provisional Patent ApplicationNo. 61/785,069 entitled “ReRAM Materials” filed on Mar. 14, 2013, whichis incorporated herein by reference.

FIELD OF THE INVENTION

This invention relates generally to nonvolatile memory elements, andmore particularly, to methods for forming resistive switching memoryelements used in nonvolatile memory devices

BACKGROUND

Nonvolatile memory elements are used in systems in which persistentstorage is required. For example, digital cameras use nonvolatile memorycards to store images and digital music players use nonvolatile memoryto store audio data. Nonvolatile memory is also used to persistentlystore data in computer environments. Nonvolatile memory is often formedusing electrically-erasable programmable read only memory (EPROM)technology. This type of nonvolatile memory contains floating gatetransistors that can be selectively programmed or erased by applicationof suitable voltages to their terminals.

As fabrication techniques improve, it is becoming possible to fabricatenonvolatile memory elements with increasingly smaller dimensions.However, as device dimensions shrink, scaling issues are posingchallenges for traditional nonvolatile memory technology. This has ledto the investigation of alternative nonvolatile memory technologies,including resistive switching nonvolatile memory.

Resistive memory device, e.g., resistive switching nonvolatile randomaccess memory (ReRAM) is formed using memory elements that have two ormore stable states with different resistances. Bistable memory has twostable states. A bistable memory element can be placed in a highresistance state or a low resistance state by application of suitablevoltages. Voltage pulses are typically used to switch the memory elementfrom one resistance state to the other. Nondestructive read operationscan be performed to ascertain the value of a data bit that is stored ina memory cell.

Resistive switching based on transition metal oxide switching elementsformed of metal oxide films has been demonstrated. Although metal oxidefilms such as these exhibit bistability, the resistance of these filmsand the ratio of the high-to-low resistance states can be insufficientto be of use within a practical nonvolatile memory device. For instance,the resistance states of the metal oxide film should preferably besignificant as compared to that of the system (e.g., the memory deviceand associated circuitry) so that any change in the resistance statechange is perceptible. The variation of the difference in resistivestates is related to the resistance of the resistive switching layer.Therefore, a low resistance metal oxide film may not form a reliablenonvolatile memory device. For example, in a nonvolatile memory that hasconductive lines formed of a relatively high resistance metal such astungsten, the resistance of the conductive lines may overwhelm theresistance of the metal oxide resistive switching element. Therefore,the state of the bistable metal oxide resistive switching element may bedifficult or impossible to sense.

Therefore, there is a need for a memory device that can meet the designcriteria for advanced memory devices.

SUMMARY

In some embodiments, methods and devices for operating resistive memorydevices are provided. After fabricating the memory structures, which caninclude a switching layer disposed between two electrodes, the memorystructure can be heated while programming, e.g., setting or resettingthe switching layer. The thermal energy, e.g., the energy from theheating process, can improve the retention of the switching layer, byovercoming a higher barrier in the process of modifying the electricalproperties of the switching layer, as compared to a programming processwithout the added thermal energy. In addition, the added thermal energycan reduce the programming voltage, e.g., the set or reset voltage forthe switching layer, which can lead to a reduction in power consumption.

In some embodiments, the temperature of the memory structure can beraised to a temperature well above the operating temperature. Aprogramming voltage can then be applied to the memory structure tochange an electrical characteristic of the switching layer, for example,by forming or destroying defect filaments in the switching layer. Thehigh temperature of the switching layer programming process can create adefect distribution that allows for lower switching voltages or allowsfor higher stability or retention.

In some embodiments, the forming temperature can be 100 C higher thanthe operating temperature. Alternatively, the forming temperature can beless than 50 C higher, or less than 100 C higher. The operatingtemperature of the memory structure can be less than about 85 C, such asbetween a room temperature of 20 C and 85 C, or between 50 C and 85 C.Thus the programming temperature can be between 50 C and 200 C, such asbetween 100 C and 150 C.

In some embodiments, the high temperature programming process can beperformed for the whole memory array, e.g., a heater can be used tosimultaneously heat all memory cells in the memory array. In addition tothe fabrication of the memory structures, e.g., the electrodes and theswitching layers, a heater structure can be formed, either under orabove the memory structures. During programming operations, the memoryarray can be heated before applying the programming voltage to programthe memory cells.

In some embodiments, the high temperature programming process can beperformed for individual memory cells in the memory array, e.g., aheater can be used for heating one or more than one memory cells. Forexample, a heater element can be fabricated under or above each memorycell in the memory array. During programming operations, the selectedindividual memory cells can be heated before applying the programmingvoltage to program the memory cells.

BRIEF DESCRIPTION OF THE DRAWINGS

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. The drawings are not to scale and the relative dimensionsof various elements in the drawings are depicted schematically and notnecessarily to scale.

The techniques of the present invention can readily be understood byconsidering the following detailed description in conjunction with theaccompanying drawings, in which:

FIGS. 1A-1C illustrate a schematic representation of a ReRAM operationaccording to some embodiments.

FIG. 2 illustrates a plot of a current passing through a unipolar ReRAMcell as a function of a programming voltage applied to the ReRAM cellaccording to some embodiments.

FIG. 3 illustrates a schematic of the programming operation of theswitching layer according to some embodiments.

FIGS. 4A-4B illustrate schematics of a programming operation of thememory cell according to some embodiments.

FIGS. 5A-5B illustrate an example of a memory structure according tosome embodiments.

FIG. 6 illustrates a schematic temperature and voltage formation of aunipolar ReRAM cell according to some embodiments.

FIGS. 7A-7B illustrate schematics of other programming operations of thememory cell according to some embodiments.

FIG. 8 illustrates a flowchart for operating a memory device accordingto some embodiments.

FIGS. 9A-9B illustrate flowcharts for programming a memory deviceaccording to some embodiments.

FIG. 10 illustrates a memory array of resistive switching memoryelements according to some embodiments.

FIGS. 11A-11B illustrate a cross point memory array according to someembodiments.

FIGS. 12A-12B illustrate another cross point memory array according tosome embodiments.

FIG. 13 illustrates a memory chip having an embedded heater elementaccording to some embodiments.

FIG. 14 illustrates a flowchart for operating a memory chip havingembedded heaters according to some embodiments.

FIG. 15 illustrates a behavior of a memory structure after programmingat high temperatures according to some embodiments.

DETAILED DESCRIPTION

A detailed description of one or more embodiments is provided belowalong with accompanying figures. The detailed description is provided inconnection with such embodiments, but is not limited to any particularexample. The scope is limited only by the claims and numerousalternatives, modifications, and equivalents are encompassed. Numerousspecific details are set forth in the following description in order toprovide a thorough understanding. These details are provided for thepurpose of example and the described techniques may be practicedaccording to the claims without some or all of these specific details.For the purpose of clarity, technical material that is known in thetechnical fields related to the embodiments has not been described indetail to avoid unnecessarily obscuring the description.

In some embodiments, methods and resistive memory devices are providedin which the resistive memory devices can be programmed at a temperaturewell above the operating temperature. The high temperature programmingprocess can create a defect distribution with higher stability, leadingto higher retention time. A memory chip incorporating the heatedprogramming process can include one or more embedded heaters in the chippackage, allowing for programming operations at higher temperature thanthe operating temperature.

A ReRAM cell exhibiting resistive switching characteristics generallyincludes multiple layers formed into a stack. The structure of thisstack is sometimes described as a Metal-Insulator-Metal (MIM) structure.Specifically, the stack includes two conductive layers operating aselectrodes. These layers may include metals and/or other conductivematerials. The stack also includes an insulator layer disposed inbetween the electrodes. The insulator layer exhibits resistive switchingproperties characterized by different resistive states of the materialforming this layer. As such, this insulator layer is often referred toas a resistive switching layer. These resistive states may be used torepresent one or more bits of information. The resistance switchingproperties of the insulator layer are believed to depend on variousdefects' presence and distribution inside this layer. For example,different distribution of oxygen vacancies in the layer may reflectdifferent resistance states of the layer, and these states may besufficiently stable for memory application.

To achieve a certain concentration of defects in the resistanceswitching layer, the layer has been conventionally deposited withdefects already present in the layer, i.e., with preformed defects. Inother words, defects are introduced into the layer during its formation.For example, tightly controlled Atomic Layer Deposition (ALD), PhysicalVapor Deposition (PVD), or some other low-temperature process to remainwithin a Back End of Line (BEOL) thermal budget may be used to depositthe insulator layer of the stack. It may be difficult to precisely andrepeatedly control formation of these defects particularly in very thinresistance switching layers (e.g., less than 100 Angstroms). Forexample, when ALD is used to form resistance switching layers, someunreacted precursors may leave carbon-containing residues that impactresistance characteristics of the deposition layers and ReRAM cellsincluding these layers. Furthermore, achieving precise partialsaturation repeatedly may be very difficult if possible at all. In thecase of PVD, sputtering targets tend to wear out influencing thedeposition rates and creating variation in resulting resistanceswitching layers.

Methods of forming nonvolatile memory elements can involve transferringoxygen from precursor layers (used to form or, more specifically,converted into resistance switching layers) to electrodes duringannealing of the stacks. The annealing environment may include somehydrogen to control distribution of oxygen within the annealedstructure.

As stated above, oxygen diffusion from the precursor layer into theelectrode converts the precursor layer into a resistance switchinglayer. The precursor layer may include a stoichiometric oxide ornear-stoichiometric oxide that cannot function as a resistance switchinglayer until oxygen vacancies or some other defects are formed withinthat layer. The metal of this oxide may be more electronegative than themetal of the electrode used to trap the oxygen diffused out of theprecursor level. The electrode may have substantially no oxygen at leastprior to the oxygen transfer but may form an oxide during annealing.

The stack may have a reactive electrode that receives some oxygen duringannealing and an inert electrode that generally does not participate inoxygen transfer. The inert electrode may be referred to as anoxygen-resistant electrode and may be made from titanium nitride,tantalum nitride, platinum, gold, and the like. Other suitable materialsfor inert electrodes include various conductive oxide, such as iridiumoxide and ruthenium oxide. In some embodiments, the inert electrodeincludes an oxide sub-layer facing the resistance switching layer. Therest of the electrode may be formed by the metal of this oxide and maybe generally free of oxygen. For example, an initial structure may befabricated from a metal and then pretreated to form an oxide layerresulting in an inert electrode. This electrode then receives aprecursor layer and another reactive electrode formed over the precursorlayer. During subsequent annealing, the inert electrode does notexperience any significant oxygen transfer, while the reactive electrodereceives oxygen from the precursor layer that is converted into theresistive switching oxide layer as it loses oxygen.

If an inert electrode with a protective oxide layer is a first formedelectrode in the stack (i.e., the bottom electrode), then it can befirst deposited as a metal layer followed by a short low-temperatureanneal in oxygen. On the other hand, if an inert electrode is the lastelectrode formed in the stack (i.e., the top electrode), then itsdeposition can be initiated in the oxygen environment (e.g., sputteringin an oxygen-containing plasma) to form an initial oxide sub-layerfollowed by deposition in an inert environment to form the remainingmetal (and oxygen free) portion of the electrode.

A reactive electrode can made from a material that reacts with oxygen toform a non-conductive oxide. Some examples of suitable materials includealuminum, titanium, tantalum, chromium, praseodymium, molybdenum,tungsten, and niobium.

A precursor layer may be made from materials, such as tantalum oxide(Ta₂O₅), niobium oxide (Nb₂O₅), titanium oxide (TiO₂), hafnium oxide(HfO₂), strontium titanate (SrTiO₃), or other suitable transition metaloxides, perovskite manganites, or rare earth oxides. The precursor layermay include a stoichiometric oxide or near-stoichiometric oxide. Forexample, oxygen vacancies in the precursor layer may have aconcentration of less than 0.1 atomic percent prior to its annealing.

Annealing may be performed on a fully formed stack including twoelectrodes and precursor layer or a partially formed stack that includesonly one electrode (the second electrode is formed after the annealing).Other types of layers may also be present in these stacks. As statedabove, annealing performed at relatively mild conditions to achievebetter control over oxygen diffusion between one or more reactive layersand precursor layer. Annealing may form a graded composition of oxygenvacancies in the precursor layer.

The resistive switching layer changes its resistive state when a certainswitching voltage (e.g., a set voltage or a reset voltage) is applied tothis layer as further explained below. The applied voltage causeslocalized heating within the layer and/or at one of both of itsinterfaces with other components. Without being restricted to anyparticular theory, it is believed that a combination of the electricalfield and localized heating (both created by the applied voltage) causesformation and breakage of various conductive paths within the resistiveswitching layer and/or at its interfaces. These conductive paths may beestablished and broken by moving defects (e.g., oxygen vacancies) withinthe resistive switching layer and through one or more interfaces thatresistive switching layer forms with adjacent layers.

The interfaces can be inert interfaces or reactive interfaces. The inertinterface generally does not have any substantial defect transferthrough this interface. While the defects may be present within one orboth layers forming this interface, these defects are not exchangedthrough the inert interface when switching, reading, or other types ofvoltages are applied to the ReRAM cell. The reactive interface generallyexperiences a transfer of defects through this interface. When aresistive switching layer includes an oxygen containing material, suchas metal oxides, the reactive interface is formed by an oxygen reactivematerial, such as titanium. The inert interface may be formed by amaterial that is not oxygen reactive, which may be a part of anelectrode or a diffusion barrier layer. In some embodiments, the flux ofdefects through the reactive interface is at two or more orders ofmagnitude greater than the flux of defects through the inert interface.As such, the “inert” and “reactive” naming convention is relative.

The inert interface provides a control for the resistive switching layerwhile defects are moved in and out of the resistive switching layerthrough the reactive interface. For example, when a switching voltage isapplied to the resistive switching layer in order to reduce itsresistance, the reactive interface allows defects to flow into thelayer. The defects are typically driven by the electrical potentialapplied to the layer and form conductive paths through the layer. Thedirection of this flow may be determined by the polarity of theswitching voltage and/or by the electrical charge of the defects (e.g.,positive charged oxygen vacancies). At the same time, the second inertinterface prevents defects from escaping the layer despite the drivingpotential. If both interfaces are reactive and allow defects to passthrough, then the resistive switching layer may gain defects at oneinterface and loose at another. In this situation, the layer may neverbe able to gain enough defects to form conductive paths.

The above scenario is applicable in a very similar manner to a resettingoperation during which the resistive switching layer is brought to itshigh resistance state. When a switching voltage is applied to the layerin order to increase its resistance of the layer, the reactive interfaceallows defects to flow out of the layer. The defects may also be drivenby the electrical potential applied to the layer as described above. Theloss of defects may eventually break conductive paths in the layer. Atthe same time, the second inert interface prevents defects from enteringthe layer despite the driving potential. If both interfaces are reactiveand allow defects to pass through during the resetting operation, thenthe resistive switching layer may gain defects at one interface andloose at another. In this situation, the layer may never be able to loseenough defects in order to break it conductive paths.

The ability of an interface to block defects (as in the inert interface)or to allow defects to diffuse through the interface (as in the reactiveinterface) depends on properties of a layer forming this interfacetogether with the resistive switching layer. Often conductive electrodesare used to form both reactive and inert interfaces. These electrodesmay be referred to as reactive and inert electrodes and materials usedto form these electrodes may be referred to as reactive and inertmaterials. It should be noted that this terminology (i.e., reactive andinert) refers primarily to defect mobility properties of the interfaces.Some examples of inert electrode materials include doped polysilicon,platinum, ruthenium, ruthenium oxide, gold, iridium, coppers, silver,and tungsten. Examples of reactive electrode materials include titanium.Furthermore, some materials may be defined as semi-inert includingtantalum nitride, tantalum silicon nitride, and tungsten siliconnitride. In the context of oxygen containing resistive switchingmaterials, such as metal oxides, reactive materials may be also referredto as oxygen reaction materials since oxygen or oxygen vacancies areexchanged through the reactive interface. Titanium is one example ofoxygen reactive materials, however other examples may be used as well.

A brief description of ReRAM cells and their switching mechanisms areprovided for better understanding of various features and structuresassociated with methods of forming nonvolatile memory elements furtherdescribed below. ReRAM is a non-volatile memory type that includesdielectric material exhibiting resistive switching characteristics. Adielectric, which is normally insulator, can be made to conduct throughone or more filaments or conduction paths formed after application of asufficiently high voltage. The conduction path formation can arise fromdifferent mechanisms, including defects, metal migration, and othermechanisms further described below. Once the one or more filaments orconduction paths are formed in the dielectric component of a memorydevice, these filaments or conduction paths may be reset (or brokenresulting in a high resistance) or set (or re-formed resulting in alower resistance) by applying certain voltages. Without being restrictedto any particular theory, it is believed that resistive switchingcorresponds to migration of defects within the resistive switching layerand, in some embodiments, across one interface formed by the resistiveswitching voltage, when a switching voltage is applied to the layer.

FIGS. 1A-1C illustrate a schematic representation of a ReRAM operationaccording to some embodiments. A basic building unit of a memory deviceis a stack having a capacitor like structure. A ReRAM cell includes twoelectrodes and a dielectric positioned in between these two electrodes.FIG. 1A illustrates a schematic representation of ReRAM cell 100including top electrode 102, bottom electrode 106, and resistanceswitching layer 104 provided in between top electrode 102 and bottomelectrode 106. It should be noted that the “top” and “bottom” referencesfor electrodes 102 and 106 are used solely for differentiation and notto imply any particular spatial orientation of these electrodes. Oftenother references, such as “first formed” and “second formed” electrodesor simply “first” and “second”, are used identify the two electrodes.ReRAM cell 100 may also include other components, such as an embeddedresistor, diode, and other components. ReRAM cell 100 is sometimesreferred to as a memory element or a memory unit.

Top electrode 102 and bottom electrode 106 may be used as conductivelines within a memory array or other types of devices incorporating aReRAM cell. As such, electrode 102 and 106 are generally formed fromconductive materials. As stated above, one of the electrodes may be areactive electrode and act as a source and as a reservoir of defects forthe resistive switching layer. That is, defects may travel through aninterface formed by this electrode with the resistive switching layer(i.e., the reactive interface). The other interface of the resistiveswitching layer may be inert and may be formed with an inert electrodeor a diffusion barrier layer.

Resistance switching layer 104 which may be initially formed from adielectric material and later can be made to conduct through one or moreconductive paths formed within the layer by applying first a formingvoltage and then a switching voltage. To provide this resistiveswitching functionality, resistance switching layer 104 includes aconcentration of electrically active defects 108, which may be at leastpartially provided into the layer during its fabrication. For example,some atoms may be absent from their native structures (i.e., creatingvacancies) and/or additional atoms may be inserted into the nativestructures (i.e., creating interstitial defects). Charge carriers may bealso introduced as dopants, stressing lattices, and other techniques.Regardless of the types, all charge carriers are referred to as defects108.

In some embodiments, these defects may be utilized for ReRAM cellsoperating according to a valence change mechanism, which may occur inspecific transition metal oxides, nitrides, and oxy-nitrides. Forexample, defects may be oxygen vacancies triggered by migration ofoxygen anions. Migrations of oxygen anions correspond to the motion ofcorresponding oxygen vacancies that are used to create and breakconductive paths. A subsequent change of the stoichiometry in thetransition metal oxides leads to a redox reaction expressed by a valencechange of the cation sublattice and a change in the electricalconductivity. In this example, the polarity of the pulse used to performthis change determines the direction of the change, i.e., reduction oroxidation. Other resistive switching mechanisms include bipolarelectrochemical metallization mechanisms and thermochemical mechanisms,which leads to a change of the stoichiometry due to a current-inducedincrease of the temperature. Some of these mechanisms will be furtherdescribed below with reference to FIGS. 1A-1C. In the describedexamples, top electrode 102 is reactive, while bottom electrode 106 isinert or is separated from resistive switching layer 104 by a diffusionbarrier layer (not shown). One having ordinary skills in the art wouldunderstand that other arrangements are possible as well and within thescope of this disclosure.

Specifically, FIG. 1A is a schematic representation of ReRAM cell 100prior to initial formation of conductive paths, in accordance with someembodiments. Resistive switching layer 104 may include some defects 108.Additional defects 108 may be provided within top electrode 102 and maybe later transferred to resistive switching layer 104 during theformation operation. In some embodiments, the resistive switching layer104 has substantially no defects prior to the forming operation and alldefects are provided from top electrode 102 during forming. Bottomelectrode 106 may or may not have any defects. It should be noted thatregardless of the presence or absence of defects in bottom electrode106, substantially no defects are exchanged between bottom electrode 106and resistive switching layer 104 during forming and/or switchingoperations.

During the forming operation, ReRAM cell 100 changes its structure fromthe one shown in FIG. 1A to the one shown in FIG. 1B. This changecorresponds to defects 108 being arranged into one or more continuouspaths within resistive switching layer 104 as, for example,schematically illustrated in FIG. 1B. Without being restricted to anyparticular theory, it is believed that defects 108 can be reorientedwithin resistance switching layer 104 to form these conductive paths 110as, for example, schematically shown in FIG. 1B. Furthermore, some orall defects 108 forming the conductive paths may enter resistiveswitching layer 104 from top electrode 102. For simplicity, all thesephenomena are collectively referred to as reorientation of defectswithin ReRAM cell 100. This reorientation of defects 108 occurs when acertain forming voltage 104 is applied to electrodes 102 and 106. Insome embodiments, the forming operation also conducted at elevatedtemperatures to enhanced mobility of the defects within ReRAM cell 100.In general, the forming operation is considered to be a part of thefabrication of ReRAM cell 100, while subsequent resistive switching isconsidered to be a part of operation of ReRAM cell.

Programming the resistive switching can involve breaking and reformingconductive paths through resistive switching layer 104, i.e., switchingbetween the state schematically illustrated in FIG. 1B and the stateschematically illustrated in FIG. 1C. The programming of the resistiveswitching is performed by applying switching voltages to electrodes 102and 106. Depending on magnitude and polarity of these voltages,conductive path 110 may be broken or re-formed. These voltages may besubstantially lower than forming voltages (i.e., voltages used in theforming operation) since much less mobility of defects is needed duringswitching operations. For example, hafnium oxide based resistive layersmay need about 7 Volts during their forming but can be switched usingvoltages less than 4 Volts.

The state of resistive switching layer 104 illustrated in FIG. 1B isreferred to as a low resistance state (LRS), while the state illustratedin FIG. 1C is referred to as a high resistance state (HRS). Theresistance difference between the LRS and HRS is due to different numberand/or conductivity of conductive paths that exists in these states,i.e., resistive switching layer 104 has more conductive paths and/orless resistive conductive paths when it is in the LRS than when it is inthe HRS. It should be noted that resistive switching layer 104 may stillhave some conductive paths while it is in the HRS, but these conductivepaths are fewer and/or more resistive than the ones corresponding to theLRS.

When switching from its LRS to HRS, which is often referred to as areset operation, resistive switching layer 104 may release some defectsinto top electrode 102. Furthermore, there may be some mobility ofdefects within resistive switching layer 104. This may lead to thinningand, in some embodiments, breakages of conductive paths as shown in FIG.1C. Depending on mobility within resistive switching layer 104 anddiffusion through the interface formed by resistive switching layer 104and top electrode 102, the conductive paths may break closer to theinterface with bottom electrode 106, somewhere within resistiveswitching layer 104, or at the interface with top electrode 102. Thisbreakage generally does not correspond to complete dispersion of defectsforming these conductive paths and may be a self limiting process, i.e.,the process may stop after some initial breakage occurs.

When switching from its HRS to LRS, which is often referred to as a setoperation, resistive switching layer 104 may receive some defects fromtop electrode 102. Similar to the reset operation described above, theremay be some mobility of defects within resistive switching layer 104.This may lead to thickening and, in some embodiments, reforming ofconductive paths as shown in FIG. 1B. In some embodiments, a voltageapplied to electrodes 102 and 104 during the set operation has the samepolarity as a voltage applied during the reset operation. This type ofswitching is referred to as unipolar switching. Some examples of cellsthat exhibit unipolar switching behavior include resistive switchinglayers formed from most metal oxide and having inert electrodes at bothsides, e.g., Pt/MeO_(x)/Pt. Alternatively, a voltage applied toelectrodes 102 and 104 during the set operation may have differentpolarity as a voltage applied during the reset operation. This type ofswitching is referred to as bipolar switching. Some examples of cellsthat exhibit bipolar switching behavior include resistive switchinglayers formed from MeOx having one inert electrode and one reactiveelectrode, e.g., TiN/MeOx/Pt and TiN/MeOx/poly-Si. Setting and resettingoperations may be repeated multiple times as will now be described withreference to FIGS. 2A and 2B.

FIG. 2 illustrates a plot of a current passing through a unipolar ReRAMcell as a function of a programming voltage applied to the ReRAM cellaccording to some embodiments. A metal-insulator-metal (MIM) structurecan be first fabricated with an amount of defects embedded in theinsulator layer. A voltage 220 can be applied to the MIM structure toform a resistive memory device from the MIM structure, for example, bymaking the insulator layer becoming a switching layer. By applying aforming voltage V_(form), the randomly distributed defects can betransitioned to lower resistance configurations, for example, in theform of filaments.

The lower resistance configurations can be characterized as a lowresistance state (LRS) 234 for the resistive memory device, whichpersists even when the voltage is reduced. The LRS can represent a logicstate of the memory device, such as a logic zero (“0”).

At LRS, when another voltage, e.g., V_(reset) is applied, the resistancecan be transitioned 235 to a high resistance state (HRS), which persistseven when the voltage is reduced. The HRS can represent another logicstate of the memory device, such as a logic one (“1”). The reset voltageV_(reset) is smaller than the forming voltage V_(form).

At HRS, when another voltage, e.g., V_(set) is applied, the resistancecan be transitioned 215 back to the low resistance state (LRS), whichpersists even when the voltage is reduced. The set voltage V_(set) isalso smaller then the forming voltage V_(form).

Overall, the ReRAM cell may be switched back and forth between its LRSand HRS many times. For example, when it is desired to turn “ON” thecell, e.g., to have a LRS, a set operation can be performed through theapplication of a set voltage V_(set) to the electrodes. Applying the setvoltage forms one or more conductive paths in the resistance switchinglayer as described above with reference to FIG. 1B. If it is desired toturn “OFF” the ReRAM cell, e.g., to change to HRS, a reset operation canbe preformed through the application of a reset voltage V_(reset) to theelectrodes. Applying the reset voltage can destroy the conductive pathsin the resistance switching layer as described above with reference toFIG. 1C.

The polarity of the reset voltage and the set voltage may be the same inunipolar memory devices, or may be different in bipolar devices (notshown). Without being restricted to any particular theory, it isbelieved that the resistive switching occurs due to filament formationand destruction caused by the application of electrical field.

Read operations may be performed in each of these states (between theswitching operations) one or more times or not performed at all. Duringthe read operation, the state of the ReRAM cell or, more specifically,the resistive state of its resistance of resistance switching layer canbe sensed by applying a sensing voltage to its electrodes. The sensingvoltage is sometimes referred to as a read voltage V_(read).

In some embodiments, the set voltage V_(set) is between about 100 mV and10V or, more specifically, between about 500 mV and 5V. The length ofset voltage pulses may be less than about 100 milliseconds or, morespecifically, less than about 5 milliseconds and even less than about100 nanoseconds. The read voltage V_(read) may be between about 0.1 and0.5 of the set voltage V_(set). In some embodiments, the read currents(I_(ON) and I_(OFF)) are greater than about 1 mA or, more specifically,is greater than about 5 mA to allow for a fast detection of the state byreasonably small sense amplifiers. The length of read voltage pulse maybe comparable to the length of the corresponding set voltage pulse ormay be shorter than the write voltage pulse. ReRAM cells should be ableto cycle between LRS and HRS between at least about 10³ times or, morespecifically, at least about 10⁷ times without failure. A data retentiontime should be at least about 5 years or, more specifically, at leastabout 10 years at a thermal stress up to 85° C. and small electricalstress, such as a constant application of the read voltage. Otherconsiderations may include low current leakage, such as less than about40 A/cm² measured at 0.5 V per 20 Å of oxide thickness in HRS.

FIG. 3 illustrates a schematic of the programming operation of theswitching layer according to some embodiments. The explanation serves asan illustration, and does not mean to bind the disclosure to anyparticular theory. After forming, the memory cell 335 can have thedefects re-arranged to form one or more filaments running from oneelectrode to the other electrode, thus providing a low resistance state.When a reset voltage is applied, the filaments can be broken, and thememory cell 315 can have a high resistance state.

From an energy level view, the broken filament configuration 315 can berepresented by an energy state 310, and the filament distributedconfiguration 335 can be represented by an energy state 330. The twostates can be separated by an energy barrier. When the set programmingvoltage V_(set) 320 is applied to the broken filament configuration 315,enough energy is supplied to the energy state 310 to allow a jump overthe barrier to the energy state 330, represented by the filamentdistributed configuration 335. With the high energy barrier representedby the set voltage V_(set), the filament distributed configuration 335can be stable during the read operations.

When the reset programming voltage V_(set) 340 is applied to the brokenfilament configuration 335, enough energy is supplied to the energystate 330 to allow a jump over the barrier to the energy state 310,represented by the filament distributed configuration 315. With the highenergy barrier represented by the reset voltage V_(reset), the filamentdistributed configuration 315 can be stable during the read operations.

As mentioned above, the explanation is illustrative. Specific operationsof the memory device can depend on the materials, the properties, andthe process conditions of the device.

In some embodiments, disclosed are improved methods and devices foroperating resistive memory devices. The memory device can be heated to aprogramming temperature, which is higher than the operating temperature,during the process of programming the switching layer, e.g., during theapplication of a programming voltage, such as a set or reset voltage.After fabricating the memory structures, the memory cells can be heatedwhile applying a programming voltage to switch the resistance state ofthe switching layer. With the addition of the thermal energy, theprogramming voltage can be reduced, which can lead to a reduction inpower consumption. Alternatively, the thermal energy can increase theprobability of overcome high barrier, e.g., allowing a higher energybarrier between the filament distributed configuration and the brokenfilament configuration. The higher barrier height can improve theretention of the switching layer as compared to a programming processwithout the added thermal energy.

FIGS. 4A-4B illustrate schematics of a programming operation of thememory cell according to some embodiments. In FIG. 4A, a broken filamentconfiguration can exhibit an energy state 410. A thermal energy ΔH 450can be applied to the broken filament configuration, together with areduced set voltage V*_(set) 420, a lower voltage than the previousmentioned V_(set) 320 but still achieve the same energy barrier heightE_(set) 422. With the applied energy E_(set) 422, the randomlydistributed defect state 410 can transition to the filament distributedenergy state 430. The added thermal energy ΔH 450 can assist in reducingthe set programming voltage while still maintaining the quality of thememory devices.

In a reverse operation, a filament distributed configuration can exhibitan energy state 430. A thermal energy ΔH 460 can be applied to thefilament distributed configuration, together with a reduced resetvoltage V*_(reset) 440, a lower voltage than the previous mentionedV_(reset) 340 but still achieve the same energy barrier height E_(reset)442. With the applied energy E_(reset) 442, the filament distributedstate 430 can transition to the broken filament energy state 410. Theadded thermal energy ΔH 460 can assist in reducing the reset programmingvoltage while still maintaining the quality of the memory devices.

In FIG. 4B, a broken filament configuration can exhibit an energy state415. A thermal energy ΔH 455 can be applied to the broken filamentconfiguration, together with a set voltage V_(set) 425, for example, asimilar voltage as the previous mentioned V_(set) 320. Due to the addedthermal energy, the energy barrier height E*_(set) 427 that a defect canovercome can be significantly increased, for example, higher than theprevious E_(set) 422 by the thermal energy ΔH 455. With the appliedenergy E*_(set) 427, the broken filament state 415 can transition to thefilament distributed energy state 435, overcoming a higher energybarrier height. The added thermal energy ΔH 455 can assist in providinga more stable filament distributed energy state 435 while stillmaintaining a similar programming voltage.

In a reverse operation, a filament distributed configuration can exhibitan energy state 435. A thermal energy ΔH 465 can be applied to thefilament distributed configuration, together with a reset voltageV_(reset) 445, for example, a similar voltage as the previous mentionedV_(reset) 340. Due to the added thermal energy, the energy barrierheight E*_(reset) 447 that a defect can overcome can be significantlyincreased, for example, higher than the previous E_(reset) 442 by thethermal energy ΔH 465. With the applied energy E*_(reset) 447, thefilament distributed state 435 can transition to the broken filamentstate 415, overcoming a higher energy barrier height. The added thermalenergy ΔH 465 can assist in providing a more stable broken filamentstate 415 while still maintaining a similar programming voltage.

Other configurations can be used, such as a set/reset voltage valuebetween the reduced set/reset voltage V*_(set) 420/V*_(reset) 440 andthe set/reset voltage V_(set) 425/V_(reset) 445.

In some embodiments, the operating temperature of the memory devices isless than 85 C, such as between a room temperature of 20 C and 85 C, orbetween 50 and 85 C. The programming temperature can be higher than theoperating temperature, up to about 200 C higher, such as between 50 and150 C higher, or between 50 and 100 C higher. In some embodiments, theprogramming temperature can be higher than the operating temperature,and can be between 50 C and 200 C.

FIGS. 5A-5B illustrate an example of a memory structure according tosome embodiments. In FIG. 5A, a cross section view of a memory structureis shown, including a memory device 500 disposed on a substrate 590. Thememory device can include a top electrode 520 disposed on an insulatorlayer 530 disposed on a bottom electrode 540. Other layers can beincluded, such as a current selector or a current limiter layer 510. Asshown, the top electrode 520 is disposed near the insulator layer 530.However, other configurations can be used, such as the top electrode 520can be disposed on the current selector or current limiter layer 510.

A resistive heater 560 can be disposed on the substrate 590 for heatingthe memory structure, together with a temperature sensor 575 formeasuring the temperature of the memory structure. The resistive heaterand the temperature sensor can be embedded in a thermal conductive layer550.

In FIG. 5B, a top view of the memory structure is shown, including aresistive heater 560 disposed in a thermal conductive layer 550. Leads565 can be used to provide a voltage or current to heat the heater 560.As shown, the temperature sensor 575 is disposed in the thermalconductive layer 550. However, the temperature sensor 575 can also beplaced at or near the memory device 500. Lead 570 can be used to measurethe temperature of the temperature sensor 575. The temperature sensorcan include a resistor or a diode, which can exhibit different currentvalues for a constant applied voltage based on the surroundingtemperature. For example, a voltage can be applied to lead 570, and acurrent is also measured at lead 570. A look-up table relating themeasured current with temperature can be used to determine thetemperature of the memory structure.

In some embodiments, the insulator layer can include a layer of TiO₂,HfO₂, ZnO₂, strontium titanate (STO), indium gallium zinc oxide (IGZO),or SnO₂. The dielectric layer can include a transition metal oxide. Thethickness of the dielectric layer can be between 5 and 25 nm. Theelectrodes can include Pt, Ru, Ti, TiN, Ag, Ni, Co, an alloy of theseelements, or a conductive metal oxide of these elements. The twoelectrodes can have same composition elements, e.g., both electrodes caninclude Pt, or can have different composition elements, e.g., oneelectrode can include Pt and the other electrode Ru. The electrodes canhave any thickness, such as between 5 and 500 nm.

In some embodiments, the temperature of the memory structure can beraised to a temperature well above the operating temperature. Aprogramming voltage can then be applied to the memory structure tochange the resistance state of the switching layer, for example, byswitching between a high resistance state and a low resistance state.The high temperature of the switching layer programming process canreduce the programming voltage, or can create a defect distribution thatallows for lower switching voltages or allows for higher stability orretention.

In some embodiments, the programming temperature can be 100 C higherthan the operating temperature. Alternatively, the forming temperaturecan be less than 50 C higher, less than 100 C higher, or more than 100 Chigher. The operating temperature of the memory structure can be lessthan about 85 C, such as between a room temperature of 20 C and 85 C, orbetween 50 C and 85 C. Thus the programming temperature can be between50 C and 300 C, such as between 100 C and 200 C or between 150 C and 175C.

FIG. 6 illustrates a schematic temperature and voltage formation of aunipolar ReRAM cell according to some embodiments. A MIM structure 610can be first fabricated with an amount of defects embedded in theinsulator layer. A voltage or current 660 can be applied to a resistiveheater 662 to heat the MIM structure LRS 624 to a programmingtemperature. A voltage V_(reset) can be applied to the LRS 624 to changeresistance state of the MIM structure to a HRS 622.

To change the resistance state from the HRS 622 to the LRS 624, avoltage or current 665 can be applied to a resistive heater 662 to heatthe MIM structure HRS 622 to a programming temperature. A voltageV_(set) can be applied to the HRS 622 to change resistance state of theMIM structure to a LRS 624. The ReRAM cell may be switched back andforth between its LRS 624 and HRS 622.

The addition of the high programming temperature can significantlychange the behavior of the switching layer during the application of theprogramming voltage. For example, higher defect formation and morestable defect distribution can be achieved with lower programmingvoltage during the high programming temperature application.

FIGS. 7A-7B illustrate schematics of other programming operations of thememory cell according to some embodiments. In FIG. 7A, a broken filamentconfiguration can exhibit an energy state 710. A thermal energy ΔH 750can be applied to the broken filament configuration, together with a setvoltage V_(set) 720 to achieve an energy barrier height E_(set) 722.With the applied energy E_(set) 722, the randomly distributed defectstate 710 can transition to the filament distributed energy state 730.In a reverse operation, a filament distributed configuration can exhibitan energy state 730. A reset voltage V_(reset) 740 can be applied toovercome the energy barrier height E_(reset) 742. With the appliedenergy E_(reset) 742, the filament distributed state 730 can transitionto the broken filament energy state 710.

In FIG. 7B, a broken filament configuration can exhibit an energy state715. A set voltage V_(set) 725 can be applied to overcome the energybarrier E_(set) 727. In a reverse operation, a filament distributedconfiguration can exhibit an energy state 735. A thermal energy ΔH 765can be applied to the filament distributed configuration, together witha reset voltage V_(reset) 745 to achieve an energy barrier heightE_(reset) 747. With the applied energy E_(reset) 747, the filamentdistributed state 735 can transition to the broken filament state 715,overcoming a higher energy barrier height.

In some embodiments, methods and memory chips are provided includingapplying a voltage at a high temperature for programming the memorydevices.

FIG. 8 illustrates a flowchart for operating a memory device accordingto some embodiments. The described flowchart is a general description oftechniques used to form the memory devices described above. Theflowchart describes techniques for forming a memory device generallyincluding two electrodes and one or more layers disposed there between.Although certain processing techniques and specifications are described,it is understood that various other techniques and modifications of thetechniques described herein may also be used.

In operation 800, a memory structure is formed. The memory structure caninclude an insulator or dielectric layer disposed between twoelectrodes. For example, a first electrode layer can first be formed.The first electrode layer can be formed on a substrate, for example, asilicon substrate that may include one or more layers already formedthereon. In some embodiments, the first electrode layer can be apolysilicon layer or a metal containing layer. For example, the firstelectrode layer can be a highly doped polysilicon layer that is formedusing a conventional chemical vapor deposition (CVD) or atomic layerdeposition (ALD) type polysilicon deposition technique. In some cases,an optional native oxide layer removal step may be performed afterforming the first layer by use of a wet chemical processing technique,or conventional dry clean process that is performed in a plasmaprocessing chamber. It should be noted that the first electrode layermay be provided on a substrate that may have a resistive memory elementand the electrode formed thereon as well. Alternatively, in the casewhere no other device is provided, the first electrode layer can be thebottom electrode. The first electrode layer can include TiN, TaN, Ni,Pt, or Ru. Other elements can also be used, such as Ti, Al, MoO₂, W,poly-Si, TiSiN, TaSiN, or any combination, mixture or alloy thereof thatcan be formed using PVD or other processes. For example, the firstelectrode can be sputtered by bombarding a metal target at 150-500 Wwith a pressure of 2-10 mTorr for a deposition rate of approximately0.5-5 {acute over (Å)}/s. These specifications are given as examples,the specifications can vary greatly depending on the material to bedeposited, the tool used to deposit the material, and the desired speedof deposition. The duration of the bombardment can determine thethickness of the electrode. Other processing techniques, such as ALD,pulsed layer deposition (PLD), physical vapor deposition (PVD), CVD,evaporation, etc. can also be used to deposit the first electrode. Insome embodiments, the first electrode is in contact with one of thesignal lines. The first electrode may have any thickness, for examplebetween about 5 nm and about 500 nm thick.

After depositing the first electrode layer, an insulator or dielectriclayer can be formed on the first electrode. The insulator layer can beoperable as a switching layer after subjected to a forming process. Theinsulator layer can include ZrO₂, HfO₂, or Al₂O₃. The thickness of theinsulator layer can be between 3 nm and 30 nm. An optional treatment canbe performed after depositing the insulator layer. The treatment caninclude a plasma treatment or a high temperature treatment. For example,the treatment can include a rapid thermal oxidation at 300 C in oxygenambient. The treatment can be performed in-situ after the deposition ofthe first electrode layer. The treatment can include an oxygen radicalanneal, e.g., plasma anneal in an oxygen ambient.

In some embodiments, the insulator layer can be deposited by a PVD orALD process. For example, an ALD process can include O₃ oxidant, atabout 250-300 C deposition temperature, using tetrakis(ethylmethylamino) zirconium (TEMAZ), Tris (dimethylamino)cyclopentadienyl Zirconium, tetrakis (ethylmethylamino) hafnium(TEMAHf), tetrakis (dimethylamido) hafnium (TDMAHf) precursors.

After depositing the insulator layer, a second electrode layer is formedon the stack. The second electrode layer can include TiN, TaN, Ni, Pt,or Ru. Other elements can also be used, such as Ti, Al, MoO₂, W,poly-Si, TiSiN, TaSiN, or any combination, mixture or alloy thereof thatcan be formed using PVD or other processes. The second electrode canhave any thickness, for example between about 5 nm and about 500 nmthick. Additional layers can be added, such as layers for a currentselector or a current limiter device.

In operation 810, the memory structure is heated, for example, to aprogramming temperature that is above or well above an intendedoperating temperature of the memory device. The memory structure can beheated by an external heater or can be heated by an embedded heaterwithin the memory device. For example, before or after depositing thememory structure, a resistive heater layer can be deposited, which, whena current is passed through, can be heated. An insulator layer can bedeposited between the resistive heater layer and the memory structure toelectrically isolate the two components.

In some embodiments, the programming temperature can be up to 100 Chigher than the operating temperature. The operating temperature of thememory structure can be less than about 85 C. Also, the programmingtemperature can be between 50 C and 250 C.

In some embodiments, the temperature of the memory structure can reachthe programming temperature before the process proceeds to the nextstep. A temperature sensor, such as an external thermocouple or anembedded diode or resistance temperature sensor, can be used to monitorthe temperature of the memory structure. The temperature sensor can belocated at or near the memory structure, can be located at or near theresistive heater element, or can be located at any locationrepresentative of the temperature of the memory structure.

For example, after depositing the resistive heater layer, atemperature-dependent resistive layer can be deposited before depositingthe memory structure. The temperature-dependent resistive layer can beused to obtain the temperature of the memory structure, for example, bymeasuring the resistance of the temperature-dependent resistive layer. Acorrelation between the resistance and the temperature of thetemperature-dependent resistive layer can be used to extract thetemperature from the resistance. Insulator layers can be depositedbetween the resistive heater layer and the temperature-dependentresistive layer, and between the temperature-dependent resistive layerand the memory structure to electrically isolate each of these twocomponents.

Other configurations can also be used, such as a temperature sensor onthe memory structure on the heater element, or the memory structure onthe heater element on the temperature sensor. Also, the temperaturesensor can include a diode or other sensor devices.

In operation 820, a programming voltage is applied to the two electrodesof the memory structure. The programming voltage can change theresistance of the switching layer, for example, by switching between ahigh resistance state (e.g., a broken filament configuration of theswitching layer) to a low resistance state (e.g., a filament distributedconfiguration of the switching layer). The programming voltage caninclude a set voltage to switch the switching layer to a low resistancestate. The programming voltage can include a reset voltage to switch theswitching layer to a high resistance state.

In some embodiments, the programming voltage can be applied after thememory temperature reaches the programming temperature, as measured bythe temperature sensor.

In operation 830, the application of the programming voltage and theheating can be stopped.

FIGS. 9A-9B illustrate flowcharts for programming a memory deviceaccording to some embodiments. In FIG. 9A, a set operation of the memorystructure can be performed after applying a set temperature, which ishigher than the operating temperature. In operation 900, a memorystructure is formed. The memory structure can include a switching layerdisposed between two electrodes. In operation 910, the memory structureis heated, for example, to a set temperature that is above or well abovean intended operating temperature of the memory device. In someembodiments, the set temperature can be up to 100 C higher than theoperating temperature, such as between 50 C and 250 C. In operation 920,a set voltage is applied to the two electrodes of the memory structure.The set voltage can change the resistance of the switching layer, forexample, by switching from a high resistance state to a low resistancestate. In operation 930, the application of the set voltage and theheating can be stopped.

In FIG. 9B, a reset operation of the memory structure can be performedafter applying a reset temperature, which is higher than the operatingtemperature. The set and reset temperature can be the same, or can bedifferent, e.g., the set temperature can be higher or lower than thereset temperature. In operation 950, a memory structure is formed. Thememory structure can include a switching layer disposed between twoelectrodes. In operation 960, the memory structure is heated, forexample, to a reset temperature that is above or well above an intendedoperating temperature of the memory device. In some embodiments, thereset temperature can be up to 100 C higher than the operatingtemperature, such as between 50 C and 250 C. In operation 970, a resetvoltage is applied to the two electrodes of the memory structure. Thereset voltage can change the resistance of the switching layer, forexample, by switching from a low resistance state to a high resistancestate. In operation 980, the application of the reset voltage and theheating can be stopped.

In some embodiments, the ReRAM cells can be configured in a cross pointmemory array. The cross point memory arrays can include horizontal wordlines that cross vertical bit lines. Memory cells can be located at thecross points of the word lines and the bit lines. The memory cells canfunction as the storage elements of a memory array.

FIG. 10 illustrates a memory array of resistive switching memoryelements according to some embodiments. Memory array 1000 may be part ofa memory device or other integrated circuit. Memory array 1000 is anexample of potential memory configurations; it is understood thatseveral other configurations are possible.

Read and write circuitry may be connected to memory elements 1002 usingsignal lines 1004 and orthogonal signal lines 1006. Signal lines such assignal lines 1004 and signal lines 1006 are sometimes referred to asword lines and bit lines and are used to read and write data into theelements 1002 of array 1000. Also, signal lines 1004 and 1006 can beused to apply forming voltage to the memory structures 1002. Individualmemory elements 1002 or groups of memory elements 1002 can be addressedusing appropriate sets of signal lines 1004 and 1006. Memory element1002 may be formed from one or more layers 1008 of materials, as isdescribed in further detail below. In addition, the memory arrays showncan be stacked in a vertical fashion to make multi-layer 3-D memoryarrays.

Any suitable read and write circuitry and array layout scheme may beused to construct a non-volatile memory device from resistive switchingmemory elements such as element 1002. For example, horizontal andvertical lines 1004 and 1006 may be connected directly to the terminalsof resistive switching memory elements 1002. This is merelyillustrative.

During the operation of the cross point memory array, such as a readoperation, the state of a memory element 1002 can be sensed by applyinga sensing voltage (i.e., a “read” voltage) to an appropriate set ofsignal lines 1004 and 1006. Depending on its history, a memory elementthat is addressed in this way may be in either a high resistance stateor a low resistance state. The resistance of the memory elementtherefore determines what digital data is being stored by the memoryelement. If the memory element has a low resistance, for example, thememory element may be said to contain a logic one (i.e., a “1” bit). If,on the other hand, the memory element has a high resistance, the memoryelement may be said to contain a logic zero (i.e., a “0” bit). During awrite operation, the state of a memory element can be changed byapplication of suitable write signals to an appropriate set of signallines 1004 and 1006.

In some embodiments, a resistive heater layer 1040 can be provided nearthe cross point memory array 1000, for example, to heat the cross pointmemory array 1000 to a forming temperature before applying a formingvoltage. Heater leads 1045 can be used to supply a voltage or current tothe resistive heater 1040.

In some embodiments, the memory elements 1002 can include a memorystructure and a current selector or a current limiter. For example, thecurrent selector can be fabricated on the memory structure, forming acolumnar memory device, which can be placed at the cross points of theword lines and bit lines.

FIGS. 11A-11B illustrate a cross point memory array according to someembodiments. FIG. 11A shows a schematic and FIG. 11B shows a crosssection view of the cross point memory array. A switching memory device1120 can include a memory element and a current selector, which are bothdisposed between the electrodes 1130 and 1140. The current selector canbe an intervening electrical component, disposed between electrode 1130and memory element, or between the electrode 1140 and memory element1120. In some embodiments, the current selector may include two or morelayers of materials that are configured to provide a selector response.

A heater element 1170 can be included in the cross point memory array,for example, to heat the memory elements to a programming temperature.The heater element 1170 can be placed on a substrate 1180, and can beisolated from the cross point memory array by an insulating layer 1160.

In some embodiments, the heater elements can be configured to heatindividual memory cells, which can minimize disturbance to neighbormemory cells. For example, each memory cell can have its own heaterelement, allowing a selective heating during the programming operations.

FIGS. 12A-12B illustrate another cross point memory array according tosome embodiments. FIG. 12A shows a schematic and FIG. 12B shows a crosssection view of the cross point memory array. A switching memory device1220 can include a memory element and a current selector, which are bothdisposed between the electrodes 1230 and 1240. The current selector canbe an intervening electrical component, disposed between electrode 1230and memory element, or between the electrode 1240 and memory element1220. In some embodiments, the current selector may include two or morelayers of materials that are configured to provide a selector response.

Heater elements 1270 can be included in the cross point memory array,for example, to heat the individual memory elements to a programmingtemperature. The heater elements 1270 can be placed on a substrate 1280,and can be isolated from the cross point memory array by an insulatinglayer 1260. The heater elements 1270 can be patterned to heat individualmemory elements 1220, for example, by forming an array of heaterelements.

In some embodiments, the high temperature programming process can beperformed at chip level, e.g., after packaging. After the memorystructures are fabricated, e.g., the electrodes and the insulator layerare deposited, on a semiconductor wafer, the wafer is diced intoindividual memory arrays. The memory arrays are then encapsulated toform memory chips. Embedded heater in the memory chips can allow heatingthe memory chip while programming the switching layers. Alternatively,for one-time-programmable (OTP) memory, the memory chips can be heatedexternally, for example, in an oven, during the program. For example,the programming can be performed during the final test of the memorychip when the chip is heated externally in an oven.

FIG. 13 illustrates a memory chip having an embedded heater elementaccording to some embodiments. A memory array 1310 and a heater element1320 can be encapsulated in a memory chip package 1330. Bond pads orlead pins 1340 can be used supply current to the heater element to heatthe memory array. The lead pins 1340 can also be used to monitor thetemperature of the memory array. The lead pins can also be used toprovide forming voltages, reading voltages, set voltages, and resetvoltages.

In some embodiments, methods to program memory chips with bothprogramming temperature and voltage/current can be provided. The methodscan include forming a memory chip with an embedded heater andtemperature sensor. The memory chip is then heated to a programmingtemperature before a programming voltage is applied to switch theswitching elements in the memory array.

FIG. 14 illustrates a flowchart for operating a memory chip havingembedded heaters according to some embodiments. In operation 1400, amemory chip is formed. The memory chip can include a memory structure,one or more heater elements and one or more temperature sensors, whichare encapsulated in a chip package. The memory structure can include aninsulator or dielectric layer disposed between two electrodes. Oneheater element and one temperature sensor can be provided to heat thewhole memory chip. e.g., all the memory structures in the memory chip.Alternatively, multiple heater elements and sensors can be used to heatindividual memory structures in the memory chip.

In operation 1410, a first voltage or current can be applied to one ormore heater elements. In the case of a single heater element heating thememory chip, the voltage or current can be applied to heat the wholememory array. In the case of multiple heater elements, the voltage orcurrent can be selected to applied to the heater elements that arecorresponded to the memory structures that are to be programmed. Inoperation 1420, the temperature from the temperature sensors can bemeasured. In some embodiments, the programming temperature can be up to100 C higher than the operating temperature. The operating temperatureof the memory structure can be less than about 145 C. Also, theprogramming temperature can be between 50 C and 250 C.

In operation 1430, a programming voltage is applied to the twoelectrodes of the memory structures to be programmed. The programmingvoltage can be applied after the measured temperature reaches a setpointtemperature. The programming voltage can change the resistance of theswitching layer, for example, by switching between a high resistancestate (e.g., a broken filament configuration of the switching layer) toa low resistance state (e.g., a filament distributed configuration ofthe switching layer). The programming voltage can include a set voltageto switch the switching layer to a low resistance state. The programmingvoltage can include a reset voltage to switch the switching layer to ahigh resistance state. In operation 1440, the application of theprogramming voltage and the heating can be stopped.

FIG. 15 illustrates a behavior of a memory structure after programmingat high temperatures according to some embodiments. A memory structurecan be programmed at 90 C, and another memory structure can beprogrammed at 150 C. The currents through the two memory structures canbe measured as a function of time, showing less current degradation inmemory structure programmed at 150 C. High temperature ambient, e.g., 90C anneal during the current measurements, can be provided foraccelerated testing. Thus, memory structures programmed at hightemperatures can show higher data retention time as compare to memorystructures programmed at lower temperatures.

Although the foregoing examples have been described in some detail forpurposes of clarity of understanding, the invention is not limited tothe details provided. There are many alternative ways of implementingthe invention. The disclosed examples are illustrative and notrestrictive.

What is claimed is:
 1. A method comprising providing a memory device,wherein the memory device operates at an operating temperature; heatingthe memory device to a programming temperature, wherein the programmingtemperature is greater than the operating temperature; and programming aswitching element of the memory device during the heating.
 2. A methodas in claim 1 wherein the operating temperature is less than 85 C,wherein the programming temperature is between 85 and 200 C.
 3. A methodas in claim 1 wherein programming a switching element of the memorydevice comprises applying a voltage or current to the switching element.4. A method as in claim 1 wherein programming a switching element of thememory device comprises applying a first voltage or current to a heaterto heat the memory device to the programming temperature, followed byapplying a second voltage or current to the switching element.
 5. Amethod comprising forming a memory structure, wherein the memorystructure comprises an insulator layer disposed between two electrodelayers, wherein the insulator layer is operable as a switching layer;heating the memory structure; while heating the memory structure,applying a voltage or current to the two electrode layers to set orreset the memory structure; and after applying the voltage or current,stopping the heating of the memory structure.
 6. A method as in claim 5wherein the memory structure is heated to a temperature higher than anoperating temperature of the memory structure.
 7. A method as in claim 5wherein the operating temperature is less than 85 C, wherein the memorystructure is heated to a temperature between 85 and 200 C.
 8. A methodas in claim 5 wherein heating the memory structure comprises applying asecond voltage or current to a heater, wherein the heater is disposed ina vicinity of the memory structure.
 9. A method as in claim 5 furthercomprising monitoring a temperature of the memory structure during theheating.
 10. A method as in claim 5 wherein the memory structurecomprises an array of memory devices, wherein a memory device comprisesa switching element disposed between two electrode layers.
 11. A methodas in claim 10 wherein heating the memory structure comprises heatingthe array of memory devices.
 12. A memory device comprising a memoryarray, wherein the memory array comprises a plurality of memorystructures, wherein each memory structure comprises an insulator layerdisposed between two electrode layers, wherein the insulator layer isoperable as a switching layer; a heater element disposed in a vicinityof the memory array, wherein the heater element is configured to heatthe plurality of memory structures; and a temperature sensor disposed ina vicinity of the memory array.
 13. A memory device as in claim 12wherein the heater is configured to heat the memory array to atemperature up to 200 C.
 14. A memory device as in claim 12 wherein theheater element comprises a heating pad, wherein the heating pad isoperable by applying a voltage or current.
 15. A memory device as inclaim 12 wherein the temperature sensor comprises a diode or a resistorelement.
 16. A memory device as in claim 12 wherein the heater elementis configured to heat all memory structures in the memory array.
 17. Amemory device as in claim 12 wherein the heater element is configured toheat individual memory structures in the memory array.
 18. A memorydevice as in claim 12 wherein the heater element comprises an array ofheating components, wherein each heating component is configured to heatan individual memory structure in the memory array.
 19. A memory deviceas in claim 12 further comprising a circuit to select heatingcomponents.
 20. A memory device as in claim 12 wherein the heaterelement and the memory array form a stack in which the heater element isseparated from the memory array by an electrical insulator layer.